Abstract
The present invention relates to a self-alignment and horizon-assembly method for fabricating heterogeneous materials. By using this method, two semiconductor materials heterogeneous to each other can be horizontally assembled by self-alignment way, without using any epitaxial buffer layers or gradient buffer layers. Therefore, when applying this method to fabricating an electronic device having heterojunction, not only the manufacture cost can be effectively reduced, but the difficulty of manufacturing process can also be overcome. Moreover, in this method, one amorphous heterogeneous semiconductor material would laterally grow to a crystal semiconductor material through epitaxy after being treated the rapid melting growth (RMG) process, and the epitaxial crystal semiconductor material would then horizontally assembly with the other one semiconductor material on an identical substrate, so as to carry out the horizon assembly of the two heterogeneous semiconductor materials by using the self-alignment way and the smallest thermal budget.