Abstract
The present invention is to provide a graphene singlet-triplet valley qubit device. The device includes a substrate, and a graphene layer formed on the substrate. An energy gap is created between a valence band and a conduction band of the graphene layer. At least one electrical gate is configured on the graphene layer and/or on two-sides of the graphene layer. The graphene layer is located in a magnetic field and a voltage is applied to at least one electrical gate, thereby creating a singlet-triplet valley qubit.