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硅异质接面太阳能电池的制程
Patent

硅异质接面太阳能电池的制程

国立清华大学, 楊士賢 and 吳永俊
11/01/2012

Abstract

The invention relates to a manufacturing process of a silicon heterojunction solar battery. The silicon heterojunction solar battery comprises a first electric silicon substrate, a first intrinsic silicon layer, a second intrinsic silicon layer, a second electric silicon layer and a first electric heavily-doping silicon layer, wherein the first intrinsic silicon layer and the second intrinsic silicon layer are respectively formed at two sides of the first electric silicon substrate and forms a heterojunction with the first electric silicon substrate; and the second electric silicon layer and the first electric heavily-doping silicon layer are respectively formed on the first intrinsic silicon layer and the second intrinsic silicon layer. According to the invention, the second electric silicon layer and the first electric heavily-doping silicon layer are formed in an ion implantation way so as to optimize the thicknesses and the doping qualities of the second electric silicon layer and the first electric heavily-doping silicon layer.

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