Abstract
The present invention provides a type of laminated microstructural giant capacitor. After making trenches of appropriate width and depth ratio on one side of an electrode substrate, high dielectric substance layers and conductive material layers are formed successively to become a basic compositional element. A single layer microstructural giant capacitor is formed when conductive material layers of two basic compositional elements are connected together. Several sets of microstructural giant capacitors are stacked and connected together to become a laminated microstructural giant capacitor. After forming a basic compositional element on each side of an electrode substrate in accordance with the foregoing procedure, a laminated microstructural giant capacitor is formed when basic compositional elements of several microstructural giant capacitors are connected together.