Abstract
A schottky barrier dioide component comprises a substrate, a buffer layer formed on the substrate, a upper layer formed on the buffer layer, a first electrode layer formed on the upper layer as the anode of the schottky barrier dioide component, a second electrode layer formed on the upper layer as the cathode of the schottky barrier dioide component, a first n-type doping region formed in the upper layer beneath the first electrode layer, formed at the inner side of the edge of the first electrode layer and contacting the first electrode layer, wherein the edge of the first electrode layer and the edge of the first electrode layer form a first predetermined distance toward a first direction at which the first electrode layer faces the second electrode layer.