Abstract
The present invention relates to a corner compensation method and a structure constructed by the method, which are applied on a micro-electromechanical system manufacture process. The method comprises following steps: (a) providing a substrate; (b) providing a conductive layer on the substrate; (c) providing a mask layer with structural shape openings and a resist layer on the conductive layer; (d) forming the resist layer through photolithography and etching process by a mask and etching the mask layer to penetrate the mask layer and form at least an opening; (e) concurrently etching the resist layer, the conductive layer and the substrate to extend the opening downwards to part of the substrate; (f) removing the resist layer and etching the conductive layer and the substrate through the structural shape openings to form deep trench structures with various depth; (g) forming periphery reinforcement structure on the periphery of the deep trench structures with various depth; (h) removing the periphery reinforcement structure on the horizontal direction and part of the substrate to expose non-reinforced silicon structures; and (i) laterally etching the non-reinforced silicon structures until reaching two sides of the opening of the periphery reinforcement structure.