Abstract
This invention provides the preparation of ultra low dielectric constant silicon dioxide film with nanometer pores. Firstly, a silicon dioxide precursor solution is prepared, in which there are at least a template polymer and a modifier. The precursor solution is spun coated on a silicon substrate and then a calcinations process is carried out to remove the template polymer and form a plural number of regularly aligned nanometer pores. The preliminarily prepared low dielectric constant nanometer pored silicon dioxide film has a dielectric constant of 2.50. The film is further treated by hydrogen and HMDS modifier vapor to modify pore surface, which leads to a reduced dielectric constant of 1.42-2.0 for the nanometer pored silicon dioxide film.