Abstract
The invention comprises steps of preparing a silicon oxide precursor solution including template polymers. The precursor solution is coated on a silicon substrate and then an oxygen-plasma calcinations process is performed to remove the template polymers in the precursor solution in order to form several nanometer bores. Therefore, an incipient nanometer-bore silicon dioxide film possessing extra-low dielectric constant is formed. Thereafter, a surface treatment of the bores is performed. In the present invention, the HMDS modifier vapor treatment, and low-power reductive gas plasma such as hydrogen or ammonia plasma can efficiently decrease the carbon content in the film and can reduce the dielectric constant and the density of the leakage of the film.