Abstract
There is provided a method for manufacturing bonded wafer with ultra-thin single crystal ferroelectricity film, which includes the steps of: providing a single crystal ferroelectricity wafer and a carrier wafer; activating the surfaces of the single crystal ferroelectricity wafer and carrier wafer; then bonding the active surface of the single crystal ferroelectricity wafer with the active surface of the carrier wafer; and finally performing a thinning process on the single crystal ferroelectricity wafer to form an ultra-thin single crystal ferroelectricity film, wherein the thinning process is accomplished by grinding, wheeling, chemical mechanical polishing (CMP) or etching, and the bonding force generated from bonding is employed to resist the shearing force during the subsequent thinning process.