Abstract
The invention discloses a control method of a non-volatile memory used in a vertical array structure, the non-volatile memory includes a substrate, a shared source polar line formed on the substrate, and a plurality of memory blocks located on the substrate, each block is provided with a storage unit string which is in connected between a bit line and the shared source polar line, the control method includes the following steps: selecting one first memory block of the memory blocks as a function block, determining one memory block of other memory blocks as a second memory block; and providing a grounding voltage to the bit line of the second memory block, and conducting the storage unit string of the second memory block so as to transfer the grounding voltage from the bit line to the shared source polar line on the substrate via the storage unit string.