Abstract
This invention relates to a fabrication process for a selective emitter electrode solar cell, it is to nitrify the base material composed of crystallized silicon for forming nitride silicon thin layer by using ammonia plasma, then make the nitride silicon thin layer into pattern for forming mask pattern, and dope dopant element into the base material through the mask pattern so that a lightly-doped diffusion area that has electrical property in opposite to the base material is formed in the area corresponding to the zone covered by the mask pattern, and a heavily-doped diffusion area that has electrical property in opposite to the base material is formed in the area corresponding to the zone uncovered by the mask pattern; then form an electrical junction structure capable of generating photoelectric current when illuminated by light. Then a front electrode that is electrically connected with the base material is formed on the area corresponding to the heavily-doped diffusion area when the pattern is removed and a back electrode that is electrically connected with the base material is formed on the bottom of the base material, thus, completing the fabrication of the selective emitter electrode solar cell.