Abstract
A method for fabricating semiconductor on silicon (Si) substrate is provided. The semiconductor is III-nitride based. The Si substrate is partial isolated . Etching is directly processed on a chip for solving wire-width problem. The Si substrate does not need to be thin. The chip can be large scaled and prevented from bowing. Thus, the present invention simplifies producing procedure and reduces production cost. Besides, with a large-scaled chip, the breakdown voltage is enhanced; and, without making the Si substrate thin, the breakover current of Si is remained the same and the heat problem is slowed down.