Abstract
The method and structure of a thin-film strain measurement is provided to measure the residue strain, the gradient of the residue strain, the coefficient of thermal expansion, the gradient of the thermal expansion for a thin-film during a surface type micro manufacturing process. A coplanar strain gauge and an un-coplanar strain gauge are formed simultaneously when the thin-film of a micro-electro-mechanical device is formed. The residue strain and the gradient of the residue strain are measured by the coplanar strain gauge and the un-coplanar strain gauge. After a thermal treatment of the thin-film is performed, the coefficient of thermal expansion and the gradient of the thermal expansion are measured by the coplanar strain gauge and the un-coplanar strain gauge.