Abstract
A BJT is disclosed herein, which includes a well, first, second and third doped regions, an oxide layer, an gate electrode, a spacer and a plug. The first, second and third doped regions are disposed in the well, where the second doped region is between the first and third doped regions. The oxide layer is disposed over the well. The gate electrode is disposed over the oxide layer. The spacer surrounds the gate electrode and the oxide layer. The plug is connected with the gate electrode. A portion of the first doped region is connected with the spacer, as well as a portion of the second doped region is connected with the spacer.