Abstract
The present invention discloses a method of manufacturing a transistor. First, a substrate and a carrier are provided. An insulating layer is formed on the substrate and a conducting layer is formed on the insulating layer. The insulating layer has a plurality of channels exposed the substrate and fluid coating material is formed on the surface of the carrier. Second, the substrate is disposed on the carrier so that the conducting layer contacts the fluid coating material. Then the substrate moves away from the carrier so as to the conducting layer is coated with the fluid coating material. After the conducting layer completely moving away from the surface of the fluid coating material on the carrier, the coating layer is formed by the fluid coating material on the conducting layer. Thus, by controlling the concentration of the fluid coating material and the speed of the substrate to determine the scope of the coating layer, the present invention can avoid the problem of thin film thickness.