Abstract
（1）本案有主張台灣優先權（申請日：2013.1.8；申請號：102100630）。;（2）本案提申同時呈報IDS（呈報內容為檢索前案之TW201003899、US20100001267、US20110260290）。;A resistive random access memory includes a first electrode, a second electrode and a first metal oxide composite layer. The second electrode is opposite to the first electrode. The first metal oxide composite layer is disposed between the first electrode and the second electrode. The first metal oxide composite layer has a film layer and a nanorod structure