Abstract
This invention provides a resistive random access memory, which comprises a first electrode layer, a variable resistive layered structure, and a second electrode layer formed on the variable resistive layered structure. The variable resistive layered structure is formed over the first electrode layer, and has a crystalline SnO2-xlayer and a conductive metal oxide layer formed on the crystalline SnO2-xlayer, wherein 0 ≦ x < 1.