Abstract
A non - volatile semiconductor device and a method for operating the same are disclosed, wherein the non - volatile semiconductor device includes a gate dielectric layer, a p-type floating gate, a coupling gate, a first p-type source/ drain, a second p-type source/ drain, a first contact plug and a second contact plug. The gate dielectric layer is formed on an n-type semiconductor substrate. The floating gate is formed on the gate dielectric layer. The first p-type source/ drain and the second p-type source/ drain are formed in the n-type semiconductor substrate and are disposed at opposing sides of the p-type floating gate. The coupling gate consists essentially of a capacitor dielectric layer and a third contact plug, where the capacitor dielectric layer is formed on the p-type floating gate, and the third contact plug is formed on the capacitor dielectric layer.