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非揮發性靜態隨機存取記憶體及其操作方法
Patent

非揮發性靜態隨機存取記憶體及其操作方法

財團法人工業技術研究院, 許世玄, 張孟凡, 林谷峰 and 邱必芬
16/11/2011

Abstract

A non-volatile static random access memory (NV-SRAM) and an operation method thereof are provided. The NV-SRAM includes a latch unit, a first switch, a second switch, a first non-volatile memory (NVM) and a second NVM. First terminals of the first and the second switches connect to a first terminal and a second terminal of the latch unit, respectively. Second terminals of the first and the second switches connect to a first bit line and a second bit line, respectively. Control terminals of the first and the second switches connect to a word line. First terminals of the first and the second NVMs connect to the first terminal and the second terminal of the latch unit, respectively. Second terminals of the first and the second NVMs connect to the first and the second bit lines, respectively. Enable terminals of the first and the second NVMs connect to an enable line.

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