Abstract
The present invention provides a polymer material and connection structure of the chip, wherein the local chip connection structure comprises: a substrate, a metal conductive wire, and a polymer material layer (parylene). The polymer material layer has properties of different hydrophobic and hydrophilic properties, low stress, low melting point and high sealing property, and can be applied to the standard semiconductor process. The polymer material layer can achieve excellent conformity in the way of spin-coating under low temperature or chemical vapor deposition (CVD), and can utilize the circuit itself of the substrate having the meander shape winded by the metal layer or the extremely fine metal conductive wire on the lateral side of the substrate to increase the current density. Afterwards, the way of local current heating can be utilized to generate enough temperature so that the polymer material layer and the substrate can be transiently hermetic. Thus, the effect of local heating can be achieved without affecting circuit properties of the chip.