Abstract
The invention provides a structure of a high-electron-mobility light-emitting transistor, and the structure comprises a substrate; setting a high-electron-mobility light-emitting transistor (HEMT) region on the substrate; and setting a gallium-nitride light-emitting diode (GaN-LED, abbrev. LED) region on the substrate, wherein the HEMT region and the LED region are respectively provided with a two-dimensional electronic gas layer, and the HEMT region is coupled to the LED region through the two-dimensional electronic gas layer. The structure can generate light with different wavelengths, and can control the brightness of a light source in the LED region.