Abstract
The invention provides a high electron mobility transistor, which comprises a silicon substrate, a channel layer, a barrier layer, a dielectric layer and a gate. The silicon substrate, the channel layer, the barrier layer and the dielectric layer are arranged in sequence along the thickness direction of the high electron mobility transistor. A final gate groove is formed in the dielectric layer. In the direction away from the barrier layer, the opening area of the final gate groove becomes larger and larger. Part of the gate is arranged in the final gate groove to be connected with the barrierlayer. The invention also provides a manufacturing method of the high electron mobility transistor. The high electron mobility transistor has the advantages of good performance and low cost.