Abstract
The invention provides a high electron mobility transistor. The high-electron-mobility transistor comprises a silicon substrate, a channel layer, a barrier layer and a grid electrode which are arranged in a laminated manner, wherein the grid electrode comprises a semiconductor grid electrode arranged on the barrier layer and a metal grid electrode arranged on the top surface of the semiconductor grid electrode, and the edge of the bottom surface of the metal grid electrode is located inside the edge of the top surface of the semiconductor grid electrode. The invention also provides a manufacturing method of the high electron mobility transistor. The high electron mobility transistor has relatively high gate breakdown voltage and relatively low gate leakage current.