Abstract
The present application relates to a high electron mobility transistor and a fabrication method therefor. The high electron mobility transistor may comprise: a substrate; a channel layer disposed on the substrate; a barrier layer disposed on the channel layer; a semiconductor gate disposed on the barrier layer; a metal gate disposed on the semiconductor gate, the metal gate having a trapezoidal cross-sectional shape; and a passivation layer which directly comes into contact with the metal gate. A first surface of the metal gate makes contact with a first surface of the semiconductor gate, andan edge of the first surface of the metal gate is located at an inner part of an edge of the first surface of the semiconductor gate.