Abstract
The present invention provides a high electron mobility transistor including a silicon substrate, a channel layer, a barrier layer, and a grid electrode. The silicon substrate, the channel layer, andthe barrier layer and the grid electrode are sequentially stacked in a thickness direction of the high electron mobility transistor. The high electron mobility transistor further includes a strain layer made of an insulating material, the surface, away from the channel layer, of the barrier layer includes a gate region and an enhancement region, the grid electrode is disposed in the gate region, the strain layer includes a reinforcement portion laminated in the reinforcement region, and the mismatch ratio of the lattice constant of the strain layer and the lattice constant of the barrier layeris not less than 0.5%. The present invention also provides a manufacturing method of the high electron mobility transistor. The high electron mobility transistor has good performance and low cost.