Abstract
This course reflects the belief that in semiconductor device physics by means of illustrative problems with step-by-step TCAD solutions. This course contents are based on the Synopsys Sentaurus TCAD 2014 version. This course thoroughly describes the tools and models for modern nanoeletronic devices by computer simulation technology with which one shall design, develop, and optimize semiconductor device structure and process technology with respect to different important commercialized semiconductor devices and materials. By using TCAD simulation for the analysis of electric and physical properties, time consumed in expensive device fabrication can be minimized leading to effective research output and huge amount of resources and manpower could also be saved. Synopsys Sentaurus TCAD is the leader in global development of 3D TCAD Simulation for CMOS Nanoeletronic Devices. Power houses in semiconductor industry such as Intel, TSMC, Samsung, and IBM are all using the Synopsys products. This course also considers all the basic semiconductor device physics theory along with recent advanced quantum perspective for nanoelectronic semiconductor device design. It is suggested that readers should have preliminary semiconductor knowledge before reading this course for a better understanding. This course is focused on three main subjects. Part I is about simulation of electrical and physical properties of Silicon CMOSFET. It starts with the designs of 2D Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and 3D Silicon and Germanium (Lg=15nm and 10nm) devices. Part II is about novel nano-semiconductor devices such as Junctionless FET and tunneling FET. Part III is about predicting the feasible solutions for Silicon and Germanium FinET devices of ultimate minimum dimension Lg=3nm and proving that Moore’s Law can be extended to the nanotechnology nodes. This chapter on ultra scaled devices serves as only a design guideline and in future more ab-initio and first principle based models shall be incorporated in the device physics for more accurate results which we believe will be updated in future editions of this course.